RJK60S5DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 20A 4LDPAK
$14.80
Available to order
Reference Price (USD)
1+
$14.80000
500+
$14.652
1000+
$14.504
1500+
$14.356
2000+
$14.208
2500+
$14.06
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RJK60S5DPE-00#J3 single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's RJK60S5DPE-00#J3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- FET Feature: Super Junction
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LDPAK
- Package / Case: SC-83
Related Products
Vishay Siliconix
SISH116DN-T1-GE3
Diodes Incorporated
ZVN2106A
Vishay Siliconix
SI1467DH-T1-E3
Panjit International Inc.
PJQ5460A_R2_00001
Infineon Technologies
IRLML2060TRPBF
Texas Instruments
CSD19505KCS
Infineon Technologies
IPA65R660CFDXKSA1
Infineon Technologies
BSC037N08NS5TATMA1
Microchip Technology
TN2130K1-G
onsemi