RJK60S7DPP-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 30A TO220FP
$7.34
Available to order
Reference Price (USD)
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$6.46000
Exquisite packaging
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The RJK60S7DPP-E0#T2 from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RJK60S7DPP-E0#T2 offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): +30V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
- FET Feature: Super Junction
- Power Dissipation (Max): 34.7W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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