RM135N100T2
Rectron USA
Rectron USA
MOSFET N-CH 100V 135A TO220-3
$1.01
Available to order
Reference Price (USD)
1+
$1.01000
500+
$0.9999
1000+
$0.9898
1500+
$0.9797
2000+
$0.9696
2500+
$0.9595
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RM135N100T2 from Rectron USA redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RM135N100T2 offers the precision and reliability you need. Trust Rectron USA to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STW12NK80Z
Torex Semiconductor Ltd
XP231N02013R-G
Diotec Semiconductor
MMFTP3401-AQ
IXYS
IXTA94N20X4
Toshiba Semiconductor and Storage
TK10A60W,S4VX
onsemi
FQD12N20LTM
Infineon Technologies
SPU03N60S5IN
onsemi
FDA28N50F
Nexperia USA Inc.
BUK7Y08-40B,115
onsemi