RM150N150HD
Rectron USA
Rectron USA
MOSFET N-CH 150V 150A TO263-2
$1.75
Available to order
Reference Price (USD)
1+
$1.75000
500+
$1.7325
1000+
$1.715
1500+
$1.6975
2000+
$1.68
2500+
$1.6625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RM150N150HD single MOSFET from Rectron USA is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the RM150N150HD is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Torex Semiconductor Ltd
XP263N1001TR-G
Fairchild Semiconductor
FQP12N60
Vishay Siliconix
IRFR224TRPBF
Toshiba Semiconductor and Storage
2SK209-BL(TE85L,F)
Microchip Technology
APT77N60BC6
Infineon Technologies
ISP13DP06NMSATMA1
Vishay Siliconix
SIHP23N60E-BE3
Alpha & Omega Semiconductor Inc.
AONS32100
Diodes Incorporated
DMP2077UCA3-7
Toshiba Semiconductor and Storage