RM4N650IP
Rectron USA
Rectron USA
MOSFET N-CHANNEL 650V 4A TO251
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RM4N650IP from Rectron USA sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rectron USA's RM4N650IP for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Vishay Siliconix
IRFBC30ASPBF
Toshiba Semiconductor and Storage
TK12A60W,S4VX
Diodes Incorporated
DMTH6010SK3-13
Diodes Incorporated
ZXMP6A13FTA
onsemi
NTHL095N65S3H
IXYS
IXFH24N90P
onsemi
FDD8770
onsemi
FDMC86102LZ
Rohm Semiconductor
RQ3C150BCTB
Nexperia USA Inc.