RM50N200HD
Rectron USA
Rectron USA
MOSFET N-CH 200V 51A TO263-2
$1.22
Available to order
Reference Price (USD)
1+
$1.22000
500+
$1.2078
1000+
$1.1956
1500+
$1.1834
2000+
$1.1712
2500+
$1.159
Exquisite packaging
Discount
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The RM50N200HD from Rectron USA sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rectron USA's RM50N200HD for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1598 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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