RM50N60LD
Rectron USA
Rectron USA
MOSFET N-CHANNEL 60V 50A TO252-2
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RM50N60LD by Rectron USA is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rectron USA for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
MMIX1F360N15T2
Panjit International Inc.
PJS6414_S1_00001
IXYS
IXTP50N20P
Infineon Technologies
IRFP2907ZPBF
Infineon Technologies
BSC009NE2LSATMA1
Infineon Technologies
IPAW60R360P7SE8228XKSA1
Vishay Siliconix
SQP120N06-06_GE3
IXYS
IXFK160N30T
Rohm Semiconductor
RCJ700N20TL
Vishay Siliconix