RM80N20DN
Rectron USA
Rectron USA
MOSFET N-CHANNEL 20V 80A 8PPAK
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RM80N20DN by Rectron USA is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rectron USA for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 66W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PPAK (3x3)
- Package / Case: 8-PowerWDFN
Related Products
onsemi
NTHL095N65S3HF
STMicroelectronics
STW4N150
Renesas Electronics America Inc
RJK0301DPB-00#J0
Infineon Technologies
IPD70R1K4CEAUMA1
Vishay Siliconix
SIHA15N80AEF-GE3
Renesas Electronics America Inc
UPA2708GR-E1-AT
Alpha & Omega Semiconductor Inc.
AON6560
Infineon Technologies
BSC12DN20NS3GATMA1
EPC
EPC8009
Vishay Siliconix