RMLV0816BGSB-4S2#HA0
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 8MBIT PARALLEL 44TSOP II
$20.64
Available to order
Reference Price (USD)
1,000+
$6.85125
2,000+
$6.56775
3,000+
$6.52050
Exquisite packaging
Discount
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The RMLV0816BGSB-4S2#HA0 from Renesas Electronics America Inc is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the RMLV0816BGSB-4S2#HA0 ensures longevity and consistent performance in various environments.
Memory ICs like the RMLV0816BGSB-4S2#HA0 are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the RMLV0816BGSB-4S2#HA0 delivers unmatched reliability and efficiency.
The RMLV0816BGSB-4S2#HA0 is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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