RN1103MFV,L3F(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
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The RN1103MFV,L3F(CT by Toshiba Semiconductor and Storage sets new benchmarks for single BJT transistors. Featuring moisture-resistant packaging (MSL-3 rated) and 8ns switching speed, it's the preferred choice for: Drone motor controllers Solar microinverters POS terminal printers Backed by Toshiba Semiconductor and Storage's global technical support and 5-year warranty for peace of mind.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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