RN1310,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q NPN BRT, Q1BSR=4.7K,
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1310,LXHF from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Toshiba Semiconductor and Storage's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
Diodes Incorporated
DDTA144WUA-7
Diodes Incorporated
DDTA115TUA-7
Toshiba Semiconductor and Storage
RN1103MFV(TPL3)
Toshiba Semiconductor and Storage
RN2111,LF(CT
Rohm Semiconductor
DTA124XMFHAT2L
Micro Commercial Co
DTC123JE-TP
Micro Commercial Co
DTA114TE-TP
Nexperia USA Inc.
NHDTC123JTR
Rohm Semiconductor
DTC143ZETL
onsemi