RN1310(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A USM
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
Discount
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Optimize your PCB layout with Toshiba Semiconductor and Storage's space-saving RN1310(TE85L,F). This pre-configured bipolar transistor eliminates external biasing components while delivering 250mW power dissipation. Applications span from smart home appliances to automotive lighting systems. Toshiba Semiconductor and Storage combines 20+ years of semiconductor expertise with cutting-edge silicon technology in this robust solution.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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