RN1711JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANSISTOR NPN X2 BRT Q1BSR10KOH
$0.08
Available to order
Reference Price (USD)
1+
$0.07632
500+
$0.0755568
1000+
$0.0747936
1500+
$0.0740304
2000+
$0.0732672
2500+
$0.072504
Exquisite packaging
Discount
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Enhance your electronic projects with Toshiba Semiconductor and Storage's RN1711JE(TE85L,F), a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The RN1711JE(TE85L,F) is perfect for use in audio equipment, power supplies, and automotive control systems. With Toshiba Semiconductor and Storage's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the RN1711JE(TE85L,F) is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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