RN1969FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
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Introducing Toshiba Semiconductor and Storage's RN1969FE(TE85L,F), a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Toshiba Semiconductor and Storage's dedication to excellence ensures that the RN1969FE(TE85L,F) meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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