RN2113ACT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.08A CST3
$0.05
Available to order
Reference Price (USD)
10,000+
$0.05208
Exquisite packaging
Discount
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Meet the RN2113ACT(TPL3) Toshiba Semiconductor and Storage's answer to modern circuit design challenges. This pre-biased bipolar transistor combines 2N3904 compatibility with enhanced thermal characteristics. Key applications include: Electric vehicle charging stations Industrial IoT gateways Smart meter modules With 100% automated production testing, each unit delivers military-grade reliability for critical infrastructure projects.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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