RN2113MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A VESM
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents the RN2113MFV,L3F a game-changer in pre-biased transistor technology. The device's thermal shutdown protection and 5kV ESD rating make it perfect for harsh environments like oil/gas monitoring and agricultural machinery. Its 1.5V low saturation voltage enhances energy efficiency in portable electronics and wearables.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
Related Products
onsemi
DTC143TM3T5G
Comchip Technology
DTC143XCA-HF
Panasonic Electronic Components
UNRF2AN00A
Rohm Semiconductor
DTC144EUBTL
onsemi
NSB9435T1G
Toshiba Semiconductor and Storage
RN2305,LXHF
Rohm Semiconductor
DTA123JUAT106
Rohm Semiconductor
DTC114EEFRATL
Nexperia USA Inc.
PBRP123YT,215
Rohm Semiconductor