RN2117(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A SSM
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your PCB layout with Toshiba Semiconductor and Storage's space-saving RN2117(TE85L,F). This pre-configured bipolar transistor eliminates external biasing components while delivering 250mW power dissipation. Applications span from smart home appliances to automotive lighting systems. Toshiba Semiconductor and Storage combines 20+ years of semiconductor expertise with cutting-edge silicon technology in this robust solution.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
Toshiba Semiconductor and Storage
RN2114(TE85L,F)
Rohm Semiconductor
DTC123JKAT146
onsemi
MUN5212T1G
Diodes Incorporated
DDTC144GUA-7
Nexperia USA Inc.
PDTA143XQBZ
Rohm Semiconductor
DTC124XMT2L
Diodes Incorporated
DDTC143ZCA-7-F
Toshiba Semiconductor and Storage
RN2317(TE85L,F)
Rohm Semiconductor
DTC114TEBTL
Diodes Incorporated