RN2314(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A USM
$0.29
Available to order
Reference Price (USD)
3,000+
$0.04830
6,000+
$0.04200
15,000+
$0.03570
30,000+
$0.03360
75,000+
$0.03150
150,000+
$0.02800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Toshiba Semiconductor and Storage's RN2314(TE85L,F), a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Toshiba Semiconductor and Storage delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
Diodes Incorporated
DDTA113TUA-7
Panasonic Electronic Components
UNR52A8G0L
Rohm Semiconductor
DTC143TMT2L
Diotec Semiconductor
MMDT5211W
Rohm Semiconductor
DTC114EMFHAT2L
Diotec Semiconductor
MMBTRC103SS-AQ
Toshiba Semiconductor and Storage
RN1309(TE85L,F)
Rohm Semiconductor
DTA143XMT2L
Nexperia USA Inc.
PDTC114YTVL
Diodes Incorporated