RN2908,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
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Optimize your designs with Toshiba Semiconductor and Storage's RN2908,LF(CT, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The RN2908,LF(CT is widely used in lighting systems, portable electronics, and automotive accessories. Toshiba Semiconductor and Storage's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the RN2908,LF(CT is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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