RN2909,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
$0.05
Available to order
Reference Price (USD)
1+
$0.04876
500+
$0.0482724
1000+
$0.0477848
1500+
$0.0472972
2000+
$0.0468096
2500+
$0.046322
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN2909,LF(CT by Toshiba Semiconductor and Storage is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. Toshiba Semiconductor and Storage's RN2909,LF(CT is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
Toshiba Semiconductor and Storage
RN1704,LF
Nexperia USA Inc.
PUMH15,115
Toshiba Semiconductor and Storage
RN2908FE,LXHF(CT
Diodes Incorporated
DDTA114GCA-7
Panasonic Electronic Components
XN0411100L
Panasonic Electronic Components
NP043A200A
onsemi
NSBC143ZPDP6T5G
onsemi
NSVBA114EDXV6T1G
Toshiba Semiconductor and Storage
RN4985,LF(CT
onsemi