RN46A1(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR=22KOHM Q1BER
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN46A1(TE85L,F) from Toshiba Semiconductor and Storage is a versatile pre-biased BJT array designed to meet the needs of diverse electronic applications. Featuring matched transistors and built-in resistors, this product enhances circuit performance while reducing design complexity. It is commonly used in audio amplifiers, power converters, and automotive electronics. Toshiba Semiconductor and Storage's commitment to quality ensures that the RN46A1(TE85L,F) operates flawlessly in both commercial and industrial settings. With its excellent thermal performance and high reliability, this transistor array is an essential component for any engineer's toolkit.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms, 10kOhms
- Resistor - Emitter Base (R2): 22kOhms, 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
Related Products
onsemi
SMUN2233T1
onsemi
NSBC123TPDP6T5G
Rohm Semiconductor
EMG3T2R
Diodes Incorporated
DCX144EUQ-7-F
Toshiba Semiconductor and Storage
RN1508(TE85L,F)
Rohm Semiconductor
IMD10AT108
onsemi
NSBC115TPDP6T5G
Rohm Semiconductor
FMG9AT148
Rohm Semiconductor
EMH3T2R
onsemi