RQ3E130MNTB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 13A HSMT8
$1.09
Available to order
Reference Price (USD)
3,000+
$0.42000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RQ3E130MNTB1 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's RQ3E130MNTB1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.1mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
Related Products
Rohm Semiconductor
SCT4036KRC15
Toshiba Semiconductor and Storage
TK100E06N1,S1X
Alpha & Omega Semiconductor Inc.
AOI950A70
onsemi
NTTFS6H860NLTAG
Diodes Incorporated
DMP4065SK3-13
IXYS
IXFH90N20X3
Rectron USA
RM150N100ADF
Texas Instruments
CSD18531Q5AT
onsemi
FDA20N50F
Infineon Technologies