RQ3G150GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CHANNEL 40V 39A 8HSMT
$1.35
Available to order
Reference Price (USD)
3,000+
$0.45248
Exquisite packaging
Discount
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Enhance your electronic projects with the RQ3G150GNTB single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's RQ3G150GNTB for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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