RUC002N05T116
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 50V 200MA SST3
$0.33
Available to order
Reference Price (USD)
3,000+
$0.04600
6,000+
$0.04000
15,000+
$0.03400
30,000+
$0.03200
75,000+
$0.03000
150,000+
$0.02800
Exquisite packaging
Discount
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Upgrade your designs with the RUC002N05T116 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RUC002N05T116 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SST3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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