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RUF020N02TL

Rohm Semiconductor
RUF020N02TL Preview
Rohm Semiconductor
MOSFET N-CH 20V 2A TUMT3
$0.43
Available to order
Reference Price (USD)
3,000+
$0.12870
6,000+
$0.12090
15,000+
$0.11310
30,000+
$0.10920
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads

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