RW1A013ZPT2R
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 12V 1.5A 6WEMT
$0.43
Available to order
Reference Price (USD)
8,000+
$0.12059
16,000+
$0.11281
24,000+
$0.10892
Exquisite packaging
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Discover the RW1A013ZPT2R from Rohm Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RW1A013ZPT2R ensures reliable performance in demanding environments. Upgrade your circuit designs with Rohm Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WEMT
- Package / Case: 6-SMD, Flat Leads
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