RYC002N05T316
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CHANNEL 50V 200MA SST3
$0.40
Available to order
Reference Price (USD)
3,000+
$0.07800
6,000+
$0.07020
15,000+
$0.06240
30,000+
$0.05850
75,000+
$0.05460
Exquisite packaging
Discount
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Enhance your electronic projects with the RYC002N05T316 single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's RYC002N05T316 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SST3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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