Shopping cart

Subtotal: $0.00

S1JLHRVG

Taiwan Semiconductor Corporation
S1JLHRVG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Panjit International Inc.

UF800_T0_00001

Semtech Corporation

JANTX1N5619.TR

Vishay General Semiconductor - Diodes Division

VS-SD603C04S10C

Vishay General Semiconductor - Diodes Division

SL23-E3/5BT

Microchip Technology

HSM3100J/TR13

Yangzhou Yangjie Electronic Technology Co.,Ltd

F1MFS-F1-0000HF

Taiwan Semiconductor Corporation

MUR460S

Comchip Technology

CGRKM4007-HF

Yangzhou Yangjie Electronic Technology Co.,Ltd

SS220A-F1-0000HF

Top