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S1JM RSG

Taiwan Semiconductor Corporation
S1JM RSG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A MICRO SMA
$0.45
Available to order
Reference Price (USD)
3,000+
$0.08840
6,000+
$0.07956
15,000+
$0.07072
30,000+
$0.06630
75,000+
$0.06188
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Micro SMA
  • Operating Temperature - Junction: -55°C ~ 175°C

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