Shopping cart

Subtotal: $0.00

S3JBH

Taiwan Semiconductor Corporation
S3JBH Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
$0.13
Available to order
Reference Price (USD)
1+
$0.12924
500+
$0.1279476
1000+
$0.1266552
1500+
$0.1253628
2000+
$0.1240704
2500+
$0.122778
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

BYT52B-TR

Diotec Semiconductor

US1A

Vishay General Semiconductor - Diodes Division

VS-15ETL06HN3

Nexperia USA Inc.

PMEG60T20ELXD-QX

Vishay General Semiconductor - Diodes Division

VS-15ETL06-1-M3

Microchip Technology

JANTXV1N5712-1

Micro Commercial Co

GS1J-LTP

Panjit International Inc.

ED306S_L2_00001

Panjit International Inc.

ED502S_S2_00001

Vishay General Semiconductor - Diodes Division

SE10FGHM3/H

Top