SA2T18H450W19SR6
NXP Semiconductors
NXP Semiconductors
A2T18H450 - AIRFAST RF POWER LDM
$197.60
Available to order
Reference Price (USD)
1+
$197.60000
500+
$195.624
1000+
$193.648
1500+
$191.672
2000+
$189.696
2500+
$187.72
Exquisite packaging
Discount
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The SA2T18H450W19SR6 RF MOSFET transistor by NXP Semiconductors is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The SA2T18H450W19SR6 stands out for its ability to handle high power levels while maintaining signal integrity. When you choose NXP Semiconductors's SA2T18H450W19SR6, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 16.6dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 89W
- Voltage - Rated: 65 V
- Package / Case: NI-1230S-4S4S
- Supplier Device Package: NI-1230S-4S4S
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