SBC846BWT1G
onsemi
onsemi
TRANS NPN 65V 0.1A SC70-3
$0.20
Available to order
Reference Price (USD)
3,000+
$0.08147
6,000+
$0.07366
15,000+
$0.06584
30,000+
$0.06194
75,000+
$0.05543
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the SBC846BWT1G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The SBC846BWT1G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
Related Products
onsemi
TIP127G
Rohm Semiconductor
2SB1695TL
Central Semiconductor Corp
CET3906E TR PBFREE
onsemi
MJF6668G
Diodes Incorporated
FZT753QTA
Nexperia USA Inc.
BC817K-40HR
Central Semiconductor Corp
2N6428 PBFREE
Rohm Semiconductor
MMSTA56T146
Infineon Technologies
BC857BWH6327XTSA1
Diodes Incorporated