SBC856BWT1G
onsemi
onsemi
TRANS PNP 65V 0.1A SC70-3
$0.18
Available to order
Reference Price (USD)
3,000+
$0.08147
6,000+
$0.07366
15,000+
$0.06584
30,000+
$0.06194
75,000+
$0.05543
Exquisite packaging
Discount
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Discover the SBC856BWT1G Bipolar Junction Transistor (BJT) from onsemi, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the SBC856BWT1G is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose onsemi for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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