SBSP52T1G
onsemi
onsemi
TRANS NPN DARL 80V 1A SOT223
$0.90
Available to order
Reference Price (USD)
1,000+
$0.37918
2,000+
$0.34363
5,000+
$0.31993
10,000+
$0.31598
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the SBSP52T1G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the SBSP52T1G delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
Related Products
Central Semiconductor Corp
2N5301 PBFREE
Diodes Incorporated
BCP5616TTA
Diotec Semiconductor
BC849B-AQ
Nexperia USA Inc.
BC817-16,215
onsemi
MPS2222RLRAG
Microchip Technology
2N6377
Comchip Technology
BC857C-HF
Rohm Semiconductor
2SD1767T100R
Microchip Technology
JAN2N4150
Nexperia USA Inc.