SCT2080KEHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 40A TO247N
$41.78
Available to order
Reference Price (USD)
1+
$31.65000
10+
$29.19300
25+
$27.88080
100+
$24.92860
Exquisite packaging
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The SCT2080KEHRC11 by Rohm Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rohm Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 4V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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