SCT3022ALGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 93A TO247N
$55.53
Available to order
Reference Price (USD)
1+
$42.07000
10+
$39.24500
30+
$37.60000
120+
$34.07500
270+
$32.90000
Exquisite packaging
Discount
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The SCT3022ALGC11 single MOSFET from Rohm Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SCT3022ALGC11 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
- Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 339W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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