SCT3030KLHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 72A TO247N
$80.76
Available to order
Reference Price (USD)
1+
$63.09000
10+
$59.26500
25+
$57.35360
100+
$53.52980
Exquisite packaging
Discount
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Meet the SCT3030KLHRC11 by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SCT3030KLHRC11 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 339W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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