SCTW90N65G2V
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 90A HIP247
$38.02
Available to order
Reference Price (USD)
1+
$38.02000
500+
$37.6398
1000+
$37.2596
1500+
$36.8794
2000+
$36.4992
2500+
$36.119
Exquisite packaging
Discount
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The SCTW90N65G2V from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's SCTW90N65G2V for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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