SCTWA10N120
STMicroelectronics
STMicroelectronics
IC POWER MOSFET 1200V HIP247
$10.93
Available to order
Reference Price (USD)
600+
$7.59800
Exquisite packaging
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Discover the SCTWA10N120 from STMicroelectronics, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SCTWA10N120 ensures reliable performance in demanding environments. Upgrade your circuit designs with STMicroelectronics's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™ Long Leads
- Package / Case: TO-247-3
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