SCTWA20N120
STMicroelectronics
STMicroelectronics
IC POWER MOSFET 1200V HIP247
$17.79
Available to order
Reference Price (USD)
600+
$9.26550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SCTWA20N120 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SCTWA20N120 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™ Long Leads
- Package / Case: TO-247-3
Related Products
IXYS
IXTL2N470
PN Junction Semiconductor
P3M06120K3
Infineon Technologies
IPP028N08N3GXKSA1
Diodes Incorporated
DMN1016UCB6-7
IXYS
IXTH10P50P
Texas Instruments
CSD17570Q5B
Rohm Semiconductor
RYM002N05T2CL
Microchip Technology
APT47M60J
Diodes Incorporated
ZXMP10A13FQTA
Diodes Incorporated