SCTWA30N120
STMicroelectronics
STMicroelectronics
IC POWER MOSFET 1200V HIP247
$29.89
Available to order
Reference Price (USD)
600+
$19.32000
Exquisite packaging
Discount
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Optimize your power electronics with the SCTWA30N120 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCTWA30N120 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™ Long Leads
- Package / Case: TO-247-3
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