SCTWA90N65G2V-4
STMicroelectronics
STMicroelectronics
TRANS SJT N-CH 650V 119A HIP247
$39.82
Available to order
Reference Price (USD)
1+
$39.82000
500+
$39.4218
1000+
$39.0236
1500+
$38.6254
2000+
$38.2272
2500+
$37.829
Exquisite packaging
Discount
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The SCTWA90N65G2V-4 from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's SCTWA90N65G2V-4 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™ Long Leads
- Package / Case: TO-247-3
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