SE12DJ-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3.2A TO263AC
$0.82
Available to order
Reference Price (USD)
4,000+
$0.40750
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SE12DJ-M3/I by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The SE12DJ-M3/I is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the SE12DJ-M3/I delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3.2A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
- Supplier Device Package: TO-263AC (SMPD)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
EIC SEMICONDUCTOR INC.
MR854BULK
Vishay General Semiconductor - Diodes Division
VS-MBRB745TRL-M3
Microchip Technology
JAN1N3612
Toshiba Semiconductor and Storage
CUHS20S40,H3F
onsemi
NRVHP420LFST1G
onsemi
NRVUS2BA
Nexperia USA Inc.
PMEG4010BEA,115
Nexperia USA Inc.
PMEG2010BER,115
Wolfspeed, Inc.
C3D16065D1
Vishay General Semiconductor - Diodes Division