SE30DT12-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
1200V 30A SURFACE-MOUNT HIGH VOL
$2.21
Available to order
Reference Price (USD)
1+
$2.21000
500+
$2.1879
1000+
$2.1658
1500+
$2.1437
2000+
$2.1216
2500+
$2.0995
Exquisite packaging
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Upgrade your electronic systems with the SE30DT12-M3/I single rectifier diode by Vishay General Semiconductor - Diodes Division. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The SE30DT12-M3/I is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Vishay General Semiconductor - Diodes Division's SE30DT12-M3/I for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.4 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Capacitance @ Vr, F: 132pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
- Supplier Device Package: SMPD
- Operating Temperature - Junction: -55°C ~ 175°C
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