SGP23N60UFTU
onsemi
onsemi
IGBT 600V 23A TO220-3
$2.56
Available to order
Reference Price (USD)
1+
$2.76000
10+
$2.48800
100+
$2.01490
500+
$1.66940
1,000+
$1.39659
Exquisite packaging
Discount
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Upgrade your power management systems with the SGP23N60UFTU Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the SGP23N60UFTU provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose SGP23N60UFTU for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 23 A
- Current - Collector Pulsed (Icm): 92 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
- Power - Max: 100 W
- Switching Energy: 115µJ (on), 135µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 17ns/60ns
- Test Condition: 300V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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