SH8K12TB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET 2N-CH 30V 5A 8SOP
$0.44
Available to order
Reference Price (USD)
2,500+
$0.35960
Exquisite packaging
Discount
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The SH8K12TB1 by Rohm Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SH8K12TB1 provides reliable operation under stringent conditions. Rohm Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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