SH8M13GZETB
Rohm Semiconductor
Rohm Semiconductor
MIDDLE POWER MOSFET SERIES (DUAL
$0.00
Available to order
Reference Price (USD)
2,500+
$0.38360
Exquisite packaging
Discount
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Elevate your electronics with the SH8M13GZETB from Rohm Semiconductor, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SH8M13GZETB provides the reliability and efficiency you need. Rohm Semiconductor's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 7A
- Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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