SH8M31GZETB
Rohm Semiconductor
Rohm Semiconductor
SH8M31 IS A POWER MOSFET WITH LO
$2.03
Available to order
Reference Price (USD)
1+
$2.03000
500+
$2.0097
1000+
$1.9894
1500+
$1.9691
2000+
$1.9488
2500+
$1.9285
Exquisite packaging
Discount
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The SH8M31GZETB by Rohm Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SH8M31GZETB provides reliable operation under stringent conditions. Rohm Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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