SH8M4TB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N/P-CH 30V 9A/7A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.75740
Exquisite packaging
Discount
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The SH8M4TB1 from Rohm Semiconductor is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SH8M4TB1 provides reliable performance in demanding environments. Choose Rohm Semiconductor for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A, 7A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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