SI1416EDH-T1-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 3.9A/3.9A SC70-6
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI1416EDH-T1-BE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI1416EDH-T1-BE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Diodes Incorporated
DMN4026SK3-13
Toshiba Semiconductor and Storage
TK65S04N1L,LQ
Alpha & Omega Semiconductor Inc.
AOSP21307
Infineon Technologies
IRF9383MTRPBF
Infineon Technologies
IPD80R1K0CEATMA1
Diodes Incorporated
DMG1012UWQ-7
Vishay Siliconix
SI7423DN-T1-GE3
STMicroelectronics
STD8N65M5
IXYS
IXTA48N20T
Nexperia USA Inc.